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XBright(R) Power Chip LED
CXXXXB500-SXX00-A
Cree's XBTM power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive lighting and white LEDs. Cree's XB power chips are compatible with optical power packages that employ proper thermal management.
FEATURES
* * * XBright LED Technology Larger "Power Chip" Design High Performance - - - - * * 35 mW min. (460 nm) Blue 30 mW min. (470 nm) Blue 20 mW min. (505 nm) Traffic Green 15 mW min. (527 nm) Green
APPLICATIONS
* General Illumination - - - - - * * * Automobile Aircraft Decorative Lighting Task Lighting Outdoor Illumination
White LEDs Crosswalk Signals Backlighting
Single Wire Bond Structure AuSn Backside Metal
CXXXXB500-SXX00-A Chip Diagram
Top View G*SiC LED Chip 500 x 500 m
Bottom View
Die Cross Section
R3CS, Rev. A Datasheet: CP
376 m Contact Metal Cathode (-)
Bond Pad 120 m Diameter
SiC Substrate h = 250 m
Anode (+) InGaN
Subject to change without notice. www.cree.com
Maximum Ratings at TA = 5C Note DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM)Note 3 Electrostatic Discharge Classification (MIL-STD-883E)Note 3 Typical Electrical/Optical Characteristics at TA = 5C, If = 5mA Part Number Forward Voltage (Vf, V) Min. C460XB500-S3500-A C470XB500-S3000-A C505XB500-S2000-A C527XB500-S1500-A Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m) Back Contact Metal Options/Thickness (m) 3.0 3.0 3.0 3.0 Typ. 3.5 3.5 3.5 3.5 Max. 4.0 4.0 4.0 4.0
Note
CXXXXB500-SXX00-A 150mANote 2 200mA 125C 5V -40C to +85C -40C to +100C 1000V Class 2
Reverse Current [I(Vr=5V), A] Max. 2 2 2 2
Full Width Half Max (D, nm) Typ. 21 22 30 35 CxxxXB500-S000-A Dimension 448 x 448 325 x 325 500 x 500 250 120 1.2 376 x 376 1.7 Tolerance 25 25 50 25 10 0.5 25 0.3
Notes:
1. 2.
3. 4. 5. 6. 7.
Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 125 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282C. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. XB500TM chips are shipped with the junction side up, requiring die transfer prior to die attach. Specifications are subject to change without notice.
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com
CPR3CS Rev. B
Standard Bins for CXXXXB500-SXX00-A
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CXXXXB500-SXX00-A) orders may be filled with any or all bins (CxxxXB500-02xx-A) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 125 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C460XB500-S3500-A Radiant Flux 55.0 mW
C460XB500-0205-A C460XB500-0201-A C460XB500-0206-A C460XB500-0202-A C460XB500-0207-A C460XB500-0203-A C460XB500-0208-A C460XB500-0204-A
35.0 mW 455 nm
457.5 nm
460 nm Dominant Wavelength C470XB500-S3000-A
462.5 nm
465 nm
Radiant Flux
38.0 mW
C470XB500-0205-A C470XB500-0201-A
C470XB500-0206-A C470XB500-0202-A
C470XB500-0207-A C470XB500-0203-A
C470XB500-0208-A C470XB500-0204-A
30.0 mW 465 nm
467.5 nm
470 nm Dominant Wavelength C505XB500-S000-A
472.5 nm
475 nm
Radiant Flux
26.0 mW
C505XB500-0203-A C505XB500-0201-A
C505XB500-0204-A C505XB500-0202-A
20.0 mW 500 nm
505 nm Dominant Wavelength C57XB500-S500-A
510 nm
Radiant Flux
24.0 mW 19.0 mW
C527XB500-0207-A C527XB500-0204-A C527XB500-0201-A
C527XB500-0208-A C527XB500-0205-A C527XB500-0202-A
C527XB500-0209-A C527XB500-0206-A C527XB500-0203-A
15.0 mW 520 nm
525 nm 530 nm Dominant Wavelength
535 nm
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com
3
CPR3CS Rev. B
Characteristic Curves, TA = 25C
Forward Current vs Forward Voltage
9
Dominant Wavelength Shift vs Forward Current
160
8
140
Dominant Wavelength Shift (nm)
7 6 5 4 3 2 1 0 -1 470nm 527nm
120
Forward Current (mA)
100
80
60
40
20
0 0 0.5 1 1.5 2 2.5 3 3.5 4
-2 0 20 40 60 80 Forward Current (mA) 100 120 140 160
Forward Voltage (V)
Relative Intensity vs Forward Current
140
120
100 % Intensity
80
60
40
20
0 0 20 40 60 80 100 120 140 160
Forward Current (mA)
Copyright (c) 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com
4
CPR3CS Rev. B

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